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Title
Publication Name
PubYear
Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system
JOURNAL OF ALLOYS AND COMPOUNDS
2008
Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system
EPL
2008
Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system
APPLIED PHYSICS LETTERS
2008
Type-I-Type-II Transition of Self-Assembled In0.55Al0.45As/Al0.5Ga0.5As Quantum Dots
JAPANESE JOURNAL OF APPLIED PHYSICS
2008
Type-I-Type-II Transition of Self-Assembled In0.55Al0.45As/Al0.5Ga0.5As Quantum Dots
ELECTRONICS LETTERS
2008
Ultra thin FBG pressure sensor with enhanced responsivity
APPLIED PHYSICS LETTERS
2008
Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2008
Ultrafast geometric manipulation of electron spin and detection of the geometric phase via Faraday rotation spectroscopy
JOURNAL OF APPLIED PHYSICS,
2008
Ultrafast Low-Temperature-Grown AlGaAs/GaAs Photorefractive Quantum-Wells Using Point-Defects as Capture Centers
CHINESE PHYSICS LETTERS,
2008
Ultraviolet-Blue Electroluminescence from Gd3Ga5O12-Ag
CHINESE PHYSICS LETTERS
2008
Undoped semi-insulating indium phosphide (InP) and its applications
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
2008
Undoped semi-insulating indium phosphide (InP) and its applications
LASER PHYSICS
2008
Undoped semi-insulating indium phosphide (InP) and its applications
APPLIED PHYSICS LETTERS
2008
Uniformity Enhancement of the Self-Organized InAs Quantum Dots
CHINESE JOURNAL OF ELECTRONICS
2008
Unusual Carrier Thermalization in A Dilute GaAs1-xNx Alloy
CHINESE PHYSICS B
2008
Unusual Temperature-Dependent Optical-Properties of Self- Organized InAs/GaAs Quantum Dots at High-Excitation Power
APPLIED PHYSICS LETTERS
2008
Unusual Temperature-Dependent Optical-Properties of Self- Organized InAs/GaAs Quantum Dots at High-Excitation Power
APPLIED PHYSICS LETTERS
2008
Unusual Temperature-Dependent Optical-Properties of Self- Organized InAs/GaAs Quantum Dots at High-Excitation Power
ACTA PHYSICA SINICA
2008
Using Fourier-Transform Infrared Grazing-Incidence Reflectivity to Study Local Vibrational-Modes in GaN
ACTA PHYSICA SINICA
2008
Using Photoluminescence as Optimization Criterion to Achieve High-Quality InGaAs/AlGaAs Phemt Structure
JOURNAL OF PHYSICS-CONDENSED MATTER
2008
