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Han Pei De
 


 

  Han Peide 

  PhD. Professor, tutor of graduate student. Graduated and obtained bachelor degree in 1981 from the special field of radio physics, Department of Physics, NanKai University. In 1996 graduated and obtained doctorate from the Institute of Applied and Technical Physics, Technische Universitat Wien, Austria. In 1998 finished his postdoctor work at Institute of Semiconductors, Chinese Academy of Sciences (CAS), and then have joined in this institute. Engaged in study on all industry-line of solar cell, mainly including high efficiency solar cell, intellectual module, new characterization and electric power system. Published 83 papers on the international academic periodicals. Achieved 12 patents and having 9 patents in officially demonstration. Having been the senior member of the National Electronic Society, member of the Photovoltaic Special Committee under Chinese Renewable Energy Association. 

  Main achievement: 

  In 1996, he found partial misfit dislocation and triple dislocations formed by forced reaction between threading dislocations by electronic microscopy, detailed analyzed the relationship between threading dislocation and misfit dislocation, exploited several methods to reduced threading dislocation density. In 2001, he nationally first grew high In compositional InGaN films and high p-type GaN films with self-assembled metal-organic vapor phase epitaxy (MOVPE) equipment, fabricated green GaN-based light emission diodes (LED). In 2005, he fabricated optical interleaver with arranged waveguide grating technology, and then, applied photonic crystals into Si integrated optoelectronics. Recently, he has investigated chalcogen hyper-doped silicon photo-detector (high response 100A/W@5V) in 2012, high efficiency crystalline silicon solar cell (21.3%) in 2013, light beam induced current mapping system and electro-luminescence and il-luminescence imaging system in 2014. Now, his main studying field is on hybrid-integration with optics, mechanics, electrics in semiconductor characterization method and instrument. Recruit graduate student study for doctor and master degree, or offer position to post-doctor. E-mail: pdhan@red.semi.ac.cn, Tel: 010-82304181(Office). 

  Mainly finished or going research projects: 

  1. National Basic Research Program of China (973 Program): “Investigation on high efficiency solar cell with new type of micro-silicon structure and wide spectrum absorption”, being in charge of “High efficiency black silicon solar cell” project (2010-2011) 

  2. National High Technology Research and Development Plan (863) project: “Optical interleaver with arranged waveguide grating” (2001-2003) 

  3. National High Technology Research and Development Plan (863) project: “Research on key technology in high brightness blue/green LED exploitation and production”, sub-plan: “Research on GaN-based green LED”, (2000-2001) 

  4. National Natural Science Fund: “High power laser energy receiver based on vertical junction structure” (2013-2016) 

  5. National Natural Science Fund: “Investigation on high efficiency solar-cell based on new micro-structural black-silicon” (2010-2012) 

  6. National Natural Science Fund: “Research on all Si waveguide photo-detector at 1.55mm wave-section” (2008-2010) 

  7. National Natural Science Fund: “Research on 2 dimensional photonic crystal interleaver based on directional waveguide coupling” (2005-2007) 

  8. National Natural Science Fund: “Research on InGaN quantum dots on different epitaxial surfaces with self-assemble technology” (2001-2003) 

  9. National Natural Science Fund: “Research on high misfit heterostructure of semiconductor photonic materials” (1997-1999) 

  Presentational books and papers: 

  [1] Shishu Lou, Huishi Zhu, and Peide Han, Laser beam homogenizing system design for photoluminescence, Applied Optics, vol.53(21), pp.4637-4644, 2014. 

  [2] Liang Peng, Peide Han, Yujie Fan and Yupeng Xing, Annealing studies of boron implanted emitters for n-silicon solar cells, Semiconductor Science & Technology, vol.29, 035011, 2014. 

  [3] Yupeng Xing, Peide Han, Yujie Fan, et.al., Improvement of silicon crystal solar cell efficiency by emitter optimization by technology and device simulation, Chinese Solar Energy, Vol.35(10), pp.2000, 2014. 

  [4] Shaoxu Hu, Peide Han, Peng Liang, Yupeng Xing, Shishu Lou, Metallic conduction behavior in selenium-hyperdoped silicon, Materials Science in Semiconductor Processing, vol.17, pp.134-137, 2014. 

  [5] Yupeng Xing, Peide Han, Shuai Wang, Yujie Fan, Peng Liang, Zhou Ye, Xinyi Li, Shaoxu Hu, Shishu Lou, Chunhua Zhao, Yanhong Mi, Performance analysis of vertical multi-junction solar cell with front surface diffusion for high concentration, Solar Energy, vol.94, pp: 8-18, 2013. 

  [6] Yupeng Xing, Peide Han, Shuai Wang, Yujie Fan, Peng Liang, Zhou Ye, Xinyi Li, Shaoxu Hu, Shishu Lou, Chunhua Zhao, Yanhong Mi, Optimization of the emitter region and the metal grid of a concentrator silicon solar cell, Journal of Semiconductors, vol.34(5), pp:054005-8, 2013. 

  [7] XING YuPeng, HAN Peide, WANG Shuai, LIANG Peng, LOU ShiShu, ZHANG YuanBo, HU ShaoXu, ZHU HuiShi, MI YanHong, ZHAO ChunHua, Analysis of effects of front and back surface dopants on silicon vertical multi-junction solar cell by 2D numerical simulation, SCIENCE CHINA Technological Sciences, vol.56(11), pp.2798-2807, 2013. 

  [8] Yujie Fan, Peide Han, Peng Liang, Yupeng Xing, Zhou Ye, Shaoxu Hu, Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells, Applied Surface Science, vol.264, pp.761-766, 2013 

  [9] Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan, Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature, Materials Science in Semiconductor Processing,   http://dx.doi.org/10.1016/j.mssp.2013.02008, 2013. 

  [10] Yujie Fan, Peide Han, Peng Liang, Yupeng Xing, Zhou Ye, Shaoxu Hu, Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells, Applied Surface Science, vol.264, pp.761-766, 2013 

  [11] Shaoxu Hu, Peide Han, Shuai Wang, Xue Mao, Xinyi Li, Yujie Fan, Lipeng Gao, Peng Liang, Yupeng Xing, Chunhua Zhao, and Yanhong Mi, Structural and optoelectronic properties of selenium- -doped silicon formed using picosecond pulsed laser mixing, Physica Status Solidi A, vol.1-6, pssa.201228202, 2012. 

  [12] Shaoxu Hu, Peide Han, Shuai Wang, Xue Mao, Xinyi Li, Lipeng Gao, Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picoseconds pulsed laser miscing, Semiconductor Science & Technology, vol.27, 102002(4pp), 2012. 

  [13] Xue Mao, Peide Han, Shaoxu Hu, Lipeng Gao, Yanhong Mi, Peng Liang, Optical and electrical properties of single-crystal Si supersaturated with Se by ion implantation, Chinese Physics Letters, 29(9): 097101, 2012. 

  [14] HU Shao-Xu, HAN Pei-De, GAO Li-Peng, MAO Xue, LI Xin-Yi, FAN Yu-Jie, Effect of femtosecond laser irradiation and thermal annealing on the optoelectronic properties of silicon supersaturated with sulfur, Chinese Physics Letters, vol.29(4), 046101, 2012. 

  [15] Xue Mao, Peide Han, Lipeng Gao, Yanhong Mi, Shaoxu Hu, Yujie Fan, Chunhua Zhao, Selenium doped silicon-on-insulator waveguide photodetector with enhance sensitivity at 1550nm, Photonics Technology Letters, vol.23(20), 1517-19, 2011. 

  [16] Li Xinyi, Peide Han, Lipeng Gao, Xue Mao, Shaoxu Hu, Electronic properties investigation of silicon supersaturated with tellurium, Applied Physics A, vol.105(4), 1021-1024, 2011. 

  [17] Gao Lipeng, Han Peide, Mao Xue, Fan Yujie, Hu Shaoxu, Zhao Chunhua, Mi Yanhong, Investigation on deep energy level formed by Se implantation in Si, Chinese Physics Letters, 28(3): 036108, 2011.