Location: Home > Education & Training >  Doctoral Mentor > Microelectronics and Solid State Electronics
Liu Feng Qi
 


Feng-Qi Liu Male, born in Aug. 1963. Winner of National Science Fund for Distinguished Young Scholars. Researcher and tutor of Ph.D.graduate students. Received the M.S. degree in solid state physics from University of Science and Technology of China, in 1990, and the Ph.D.degree in condensed matter physics from Nanjing University, in 1996. His research has focused on MBE technology, semiconductor nano-materials and devices, quantum cascade lasers, semiconductor clusters design and assembly. He has developed strain-compensated InGaAs/InAlAs quantum cascade lasers operating at 3.5 microns above room temperature, and has achieved several significant results in strain-compensated InGaAs/InAlAs quantum cascade lasers operating at 5.5 and 7.8 microns and GaAs/AlGaAs quantum cascade lasers operating at 9.1 microns. He disclosed the existence of quasifree clusters by a novel experimental design, and realized the cross-over of self-organized quantum dot array into quantum wire. He presented a route to realize a high resolution nanograting woven by strain-compensated self-assembled semiconductor nanowires.


E-mail: fqliu@red.semi.ac.cn. Tel: 010-82304026.


[1] F.-Q.Liu, L.-S.Liao, G.-H.Wang, G.-X.Cheng, and X.-M.Bao, "Experimental observation of surface modes of quasifree clusters," Phys.Rev.Lett. Vol.76, 604 (1996).


[2] F.-Q.Liu, Z.-G.Wang, G.-H.Li, and G.-H.Wang, "Photoluminescence from Ge clusters embedded in porous silicon," J.Appl.Phys.(Communications), Vol.83, 3435 (1998).


[3] F.-Q.Liu, Z.-G.Wang, B.Xu, J.Wu, and J.-J.Qian, "Metamorphosis of self-organized quantum dots into quantum wires," Phys.Lett.A, Vol.249, 555, 1998.


[4] F.-Q.Liu, Z.-G.Wang, J.Wu, B.Xu, Q.Gong, and J.-B.Liang, "Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001)," J.Appl.Phys.(Communications), Vol.85, 619 (1999).


[5] F.-Q.Liu, Y.-Z.Zhang, Q.-S.Zhang, D.Ding, B.Xu, Z.-G.Wang, D.-S.Jiang, and B.-Q.Sun, "Room temperature (34° C) operation of strain-compensated quantum cascade lasers," Electron.Lett. Vol.36, 1704 (2000).


[6] F.-Q.Liu, Y.-Z.Zhang, Q.-S.Zhang, D.Ding, B.Xu, Z.-G.Wang, D.-S.Jiang, and B.-Q.Sun, "High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers," Semiconductor Science and Technology, Vol. 15, L44 (2000).



[7] Yu Guo, F.Q.Liu, J.Q.Liu, C. M. Li, and Z.G. Wang, "8 microns strain-compensated quantum cascade laser operating at room temperature," Semicond. Sci. Technol. 20, 844 (2005).



[8] Jun-Qi Liu, Feng-Qi Liu, Xiu-Zhen Lu, Yu Guo, and Zhan-Guo Wang, "Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power," Solid-State Electronics 49, 1961 (2005).


[9] Feng-Qi Liu, Ye Shao, Xiu-Qi Huang, and Zhan-GuoWang, "Artificial nanograting woven by self-assembled nanowires," Nanotechnology 16, 2077 (2005).


[10] Xiao-Ling Che, Lu Li, Feng-Qi Liu, Xiu-Qi Huang, and Zhan-Guo Wang, "Porous InP array-directed assembly of InAs nanostructure," Applied Physics Letters 88, 263107 (2006)