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Ma Xiao Yu
 


MA Xiaoyu received the B. Sc., and M. Sc., degree in Electronic Engineering from Jilin University in 1984, and 1987 respectively. In 1987, he joined the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, where as a leader of a group, he is in charge of several national program for long wavelength laser diodes, 1310nm uncooled QW laser diodes, 650nm DVD laser diodes and so on. And also in charge of MOCVD epi-growth for some of national programs. Since 1997, he has been a Professor with the Institute of Semiconductors, Chinese Academy of Sciences. His current research interests involved the MOCVD epi-growth research of InGaAsP/InP, AlGaAs/GaAs, AlGaInP/GaInP QW materials and their applications such as laser diodes

Selected publications

1. Guotong DU, Xiaoyu Ma, Zheng Zou, Xiaobo ZHANG, and Dingsan GAO (1989) "Terraced substrate inner stripe semiconductor lasers by one-step liquid-phase epitaxy" J. Appl. Phys. Vol.66, No.5, P.2225-2227, 1 September
2. PENG Huaide, MA Xiaoyu, MA Chaohua, ZHANG Shenglian, WANG Xiaojie and PANG Guisheng (1992) "1.3?m and 1.5?m InGaAsP/InP p-type InP substrate buried crescent (PBC) laser diodes with low threshold current and high efficiency” International J. of Optoelectronics, Vol.7, No.1, P.79-84
3. 马骁宇,王树堂, 熊飞克,郭 良,王仲明,曾 靖,王丽明,陈良惠 (1996)“低压MOCVD外延生长InGaAsP/InP应变量子阱材料与器件应用” 半导体学报 第17卷第5期第398页(1996)
MA Xiaoyu, WANG Shutang, XIONG Feike, GUO Liang, WANG Zhongming, ZENG Jing, WANG Liming, CHEN Lianghui (1996) “InGaAsP/InP stained-layers quantum materials and their applications by LP-MOCVD” Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors v 17 n 5 May 1996 p 398 In Chinese
4. MA Xiaoyu, WANG Shutang, XIONG Feike, GUO Liang, WANG Zhongming, WANG Liming, ZHANG Xiaoyan, SUN Guoxi, XIA Caihong, ZHU Tian, YANG Yali, ZHANG Hongqin, HE Guangping, YAO Shuqin, BI Kekui, CHEN Lianghui (1996)“High-performance 1.3- and 1.55-?m InGaAP/InP strained-layer quantum well lasers grown by LP-MOCVD (Invited Paper)” PROCEEDINGS SPIE Integrated Optoelectronics Vol. 2891, p.2891-34, 1996, Beijing
5. Ma, Xiaoyu; Cao, Qing; Wang, Shutang; Guo, Liang; Wang, Liming; Yang, Yali; Zhang, Hongqin; Zhang, Xiaoyan; Chen, Lianghui (1998) Study of single mode 650 nm AlGaInP quantum well laser diodes for DVD (Invited Paper) Proceedings of SPIE - The International Society for Optical Engineering v 3547 Sep 16-18 1998 1998 Sponsored by: SPIE SPIE p 127-129 0277-786X
6. Yang, G.W.; Hwu, R. Jennifer; Xu, Z.T.; Ma, X.Y. (1999) High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition IEEE Journal of Quantum Electronics 35 10 1999 IEEE p 1535-1541 0018-9197
7. Fang, Gaozhan; Xiao, Jianwei; Ma, Xiaoyu; Feng, Xiaoming; Wang, Xiaowei; Liu, Yuanyuan; Liu, Bin; Tan, Manqing; Lan, Yongsheng (2002) High power 808 nm AlGaAs/GaAs quantum well laser diodes with broad waveguide Chinese Journal of Semiconductors v 23 n 8 August 2002 Science Press p 809-812 0253-4177
8. Wang, Xiaowei; Xiao, Jianwei; Ma, Xiaoyu; Wang, Zhongming; Fang, Gaozhan (2002) Fiber optic coupling of CW linear laser diode array Chinese Journal of Lasers B (English Edition) v 11 n 3 June 2002 Science Press p 205-207 1004-2822
9. Wei, Xin; Ma, Xiaoyu; Wang, Guohong; Zhang, Guangze; Zhu, Xiaopeng; Chen, Lianghui (2002) Metalorganic chemical vapor deposition of GaNAs alloy using dimethylhydrazine as nitrogen precursor Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors v 23 n 6 June 2002 Science Press p 565-570 0253-4177
10. Wei, X.; Wang, G.H.; Zhang, G.Z.; Zhu, X.P.; Ma, X.Y.; Chen, L.H.(2002) Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors Journal of Crystal Growth v 236 n 4 March 2002 Elsevier Science B.V. p 516-522 0022-0248