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Ma Wen Quan
 


  Wenquan Ma graduated from Physics Department, Lanzhou University and got MSc degree from Institute of Semiconductors, Chinese Academy of Sciences (CAS). He got PhD from Humboldt University, Berlin Germany and his PhD thesis work was preformed in Paul Drude Institute for Solid State Electronics. From 2001 to 2004, he worked as a postdoc in the Physics Department of University of Arkansas USA. Starting from October 2004, he joined Institute of Semiconductors CAS and became a recipient of the "Hundred Talents Project" of CAS in 2005. Dr. Ma has been working on MBE growth, characterization and device investigation of low dimensional semiconductor nanostructures. His present main research interests focus on quantum dot infrared photodetector, antimonide type II superlattice infrared photodetector, self-organized synthesis of spatially ordered quantum dot arrays.
E-mail: wqma@semi.ac.cn

Telephone:010-82304089

Selected recent publications:

1, Y. Wei, W.Q. Ma*, Y.H. Zhang , J.L. Huang, Y.L. Cao, and K. Cui, “High structural quality of type II InAs/GaSb superlattices for very long wavelength infrared detection by interface control”, IEEE J. Quantum Electron. 48, 512 (2012).

2, Y.H. Zhang, W.Q. Ma*, Y.L. Cao, J.L. Huang,, Y. Wei, K. Cui, and J. Shao, “Long wavelength infrared InAs/GaSb superlattice photodetectors with InSb-like and mixed interfaces”, IEEE J. Quantum Electron. 47, 1475 (2011).

3,K. Cui, W.Q. Ma*, Y.H. Zhang, J.L. Huang, Y. Wei, Y.L. Cao, Z. Jin and L.F. Bian, “Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure”, Appl. Phys. Lett. 99, 023502 (2011).

4,Y. Wei, W.Q. Ma*, J.L. Huang, Y.H. Zhang, ,Y.H. Huo, K. Cui and L.H. Chen, “Very long wavelength quantum dot infarerd photodetector using a modified dots-in-a-well structure with AlgaAs insertion layers”, Appl. Phys. Lett. 98, 103507 (2011).

5,J.L. Huang, W.Q. Ma*, Y. Wei, Y.H. Zhang, ,Y.H. Huo, K. Cui and L.H. Chen, “Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetctor with double tunneling barriers”, Appl. Phys. Lett. 98, 103501 (2011).

6, Y.H. Huo, W.Q. Ma*, Y.H. Zhang, L.H. Chen and Y.L. Shi, “Quantum well infrared photodetector simultaneously working in two atomospheric windows”, Appl. Phys. A 100, 415 (2010).

7, E.B. Flagg, A. Muller, J.W. Robertson, S. Founta, D.G. Deppe, M. Xiao, W. Ma, G.J. Salamo, and C.K. Shih, “Resonantly driven coherent oscillations in a solid state quantum emitter”, Nature Physics, 5, 203 (2009).

8, E.B. Flagg, J.W. Robertson, S. Founta, W.Q. Ma, M. Xiao, G.J. Salamo, and C.K. Shih, “Direct evidence of interlevel exciton transitions mediated by single phonons in a semiconductor quantum dot using resonant fluorescence spectroscopy”, Phys. Rev. Lett., 102, 097402 (2009).

9, W.Q. Ma*,X.J. Yang, M. Chong, T. Yang, L.H. Chen, J. Shao, X. Lü, W. Lu, C.Y. Song, and H.C. Liu, “Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector”, Appl. Phys. Lett. 93, 013502 (2008).

10, A. Muller, E.B. Flagg, P. Bianucci, X.Y. Wang, D.G. Deppe, W. Ma, J. Zhang, G.J. Salamo, M. Xiao, and C.K. Shih, “Resonance fluorescence from a coherently driven semiconductor quantum dot in a cavity”, Phys. Rev. Lett., 99, 187403 (2007).