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Wang Zhan Guo

Zhanguo WangZ.G.Wang) Semiconductor materials physicist.Born in Zhenping county, Henan Province.Graduated from department of physics, Nankai University in 1962. Research professor, Institute of Semiconductors, Chinese Academy of Sciences.He was elected Member of the Chinese Academy of Sciences in 1995.

In the early 1960s Wang was engaged in the studies on radiation effects of silicon solar cells for satellites and the optical and electrical properties of semiconductor materials as well. From 1980, his main interests were on the deep level physics and spectrum physics of semiconductors. He and his co-works developed a new method to identify whether the two deep levels within a band gap are coupled or not, thus solving the long existing fundamental question of gold-related donor and acceptor in Si, and A and B deep levels in LPE GaAs. He suggested a model of deep level broadening and PL spectrum splitting in semiconductor alloys. According this model, the non-exponential transient behavior of thermal emission and capture of carriers via deep levels and the physical origin of PL spectrum splitting of deep levels could be explained. In 1986, he joined Professor Lin Lanying’s group, and the GaAs single crystal was successfully grown from the melt in space for the first time. In 1993, he proposed a multi-level compensation model and new criteria of electrical compensation for undoped SI-GaAs, which can not only explain the GaAs conductivity but also provide a clue for improving the quality of this material. Recent years he and his co-workers are working on low dimensional semiconductor materials (quantum well, quantum wires and quantum dots etc) growth and quantum devices fabrication, and the fruitful results have been obtained. Recently a concept of the flexible substrate was proposed by him, in which might open a new direction for developing new hetero-structural materials system with a large lattice–mismatch.

Selected publications

1. Z.G.Wang, L-A.Ledebo and H.G.Grimmeiss;Electronic Properties of Native Deep Level Defects in LPE GaAs; J. of Phys., C: Solid State Phys., 17, 259(1984).
2. L.Samuelson, S.Nilsson, Z.G.Wang and H.G.Grimmeiss;Direct Evidence for Random-Alloy Splitting of Cu Level in GaAs1-xPx; Phys. Rev. Lett., 53, 1501(1984).
3. Ren.Guangbao, Wang Zhanguo etal;Thcoretical Investigation of the Dynamic Process of the Illumination of GaAs; Phys. Rev. B50, 5189(1994).
4. Jianrong Dong, Zhanguo Wang etal;Ordering along<111>and <100>directrions in GaInP demonstrated by photoluminescence under hydrostatic pressure; Appl. Phys. Lett., 68, 1711( 1996).
5. Y.H.Chen, Z.Yang, B.Xu, Z.G.Wang etal;Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix. Phys. Rev., B56, 6770(1997).
6. Lianshan Wang, Xiaoglin Liu, Yude Zan, Du Wang, Jun Wang, Dacheng Lu and Zhanguo Wang;Wurtzite GaN epitaxial growth on a Si(001)substrate using ?-Al2O3 as an intermediate layer. Appl. Phys. Lett., 72,109(1998).
7. Wang Zhanguo, Chen Yonghai, Liu Fengqi and Wu Ju, Self-assembled quantum dots, wires and quantum-dot lasers, J. Crystal Growth 227-228, 1132 (2001)
8. Hui-Yun Liu, Bo Xu, Yong-Qiang Wei, Ding Ding, Jia-Jun Qian, Qin Han, Ji-Ben Liang, and Zhan-Guo Wang;High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080nm. Appl. Phys. Lett. 79(18 ) 2868 (2001).