Zeng Yi Ping, Male, born in 1961, graduated from the Chinese Science and Technology University in 1983. Researcher of the Institute of Semiconductors, Chinese Academy of Sciences. Engaged in studying compound semiconductor microstructure materials and MBE technology. Researched and developed AlGaAs/GaAs quantum well laser material, quantum well infrared detector material, self electro-optics effect devices material, as well as GaAs and InP based microwave and millimeter wave devices material etc. At present, the research direction is III-V compound semiconductor microstructure materials and MBE technology, the field of material application is mainly the application of modern high-frenquecy, high-speed communication.
1、 High quality metamophic HEMT grown on GaAs substrates by MBE
Y.P. Zeng, X. Cao, L.J. Cui, M.Y. Kong, L. Pan, B.Q. Wang and Z.P. Zhu, Crystal Growth227-228(2001)， 210-213 .
2、Rapid thermal annealing on step-graded InAlAs buffer layer and In0.52Al0.48As/ In0.53Ga0.47As metamophic high electron mobility transistor structures on GaAs substrates
L. J. Cui, Y. P. Zeng, B. Q. Wang, J. Wu, Z. P. Zhu, and L. Y. Lin J. Appl. Phys., 91, 2429 (2002).
3、Zero-field spin splitting in In0.52Al0.48As/ InxGa1-xAs metamophic high electron mobility transistor structures on GaAs substrates using Shubnikov de hass measurements
L. J. Cui, Y. P. Zeng, B. Q. Wang, Z. P. Zhu, L. Y. Lin, C. P. Jiang, S. L. Guo, and J. H. Chu Appl. Phys. Lett., 80, 3132 (2002).
4、The Market and Industrialization Forecast of GaAs-based MBE Materials
Kong Meiying and Zeng Yiping
5、The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices
Xin Cao,YiPing Zeng, MeiYing Kong,Liang Pan,Baoqing Wang,Zhanping Zhu, Solid-State Electronics,Vol.45(2001)No.5,751-754.
6、Characteristic of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE
H.M.Wang, Y.P.Zeng, T.W.Zhou, D.Pan, J.R.Dong, M.Y.Kong. Journal of Crystal Growth 179 (1997) 658-660
7、Growth and transport proterties of InAs thin films on GaAs
Zhou Hongwei, Zeng Yiping, Wang Hongmei, Dong Jianrong, Zhu Zhanping, Pan Liang,
Kong Meiying Journal of Crystal Growth 191(1998)361-364
8、Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs (001) substrate measured by a series of symmetric double crystal X-ray diffraction
Hongmei Wang, Yiping Zeng, Hongwei Zhou, Meiying Kong. Journal of Crystal Growth 191(1998)627-630.
9、Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice
Dong Pan, YP Zeng, J.Wu, H.M. Wang, and M.Y.Kong. Appl. Phys. Lett. 70(18) 5 MAY 1997