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Zheng Hou Zhi
 


    Houzhi Zheng,Professor, Ph.D Supervisor, Member of Chinese Academy of Sciences(elected in 1995)

    Since 1979, he has been engaged in the physics and device’s exploration of low-dimentional, semiconductor-quantum structures. In the present his main research scopes have been focused on
○Physics of low-dimensional quantum structures and Nano-quantum devices
○Semiconductor spintronics and spin quantum devices
○Quantum-coherent processes in semiconductors, wave-function- engineering and quantum-coherent devices

    The state-key-Laboratory for Superlattices and Microstructures, which he has been affiliated with, has many advanced and full-equipped experimental means for molecular-beam-epitaxy (MBE) growth and a variety of both optical and electrical measurements, including 4 sets of MBE systems (one brand new, three used); various steady-state, time-resolved and nonlinear. photo-spectroscopies (FS time-resolved laser spectroscopy, Raman spectrospopy, FFT spectroscopy, PL/PLE spectroscopies, Magneto-optical spectroscopy and time-resolved Farady-rotation-spectroscopy); Low-temperature, high magnet systems and a number of electric text systems. The newly established, Center for Semiconductor-Integrating Technology in the institute is going to provide advanced and comprehensive nanofabrication technologies.

    Through the years he has worded out a series of important results in the field of low-dimensional semiconductor quantum structures. He gave the first report on the size effect in quantum Hall regime. He invented, independently at the same time as UK scientist, split-gate-controlled, quasi-one dimensional GaAs/AlGaAs heterostructures. He, for the first time, reported the 2D-to-1D dimensional crossover of weak localization. He obtained the first experimental verification for the theoretical relation between the dephasing time and conductivity. He proposed a new theory on anomalous magnetoresistance of 2D hole gas. He found the peculiar properties of 2D-to-2D resonant tunneling mode. He developed various new methods for measuring the electron diffussion constant in quantum Hall regime, tunneling excaping time from quantum wells and Landau density of states by magneto-capacitance spectrum in double barrier structures. He has also been involved in exploiting new tunable quantum-dot micro-cavity-detectors and photon-storage detector et al.


Selected publications


1. H.Z.Zheng,K.K.Choi and D.C.Tsui, “Observation of size effect in the quantum Hall regime”, Phys.Rev.Lett.55,1144,(1985)
2. H.Z.Zheng, H.P.Wei and D.C.Tsui, “Gate-controlled transport in narrow GaAs/AlxGa1-xAs heterostructures”, Phys.Rev.B34,5635(1986)
3. H.Z.Zheng, H.P.Zhou, “Influences of particle-hole Hartree interaction on magnetoresistances in disordered two-dimensional hole systems”, Phys.Rev.B39,3817(1989)
4. H.Z.Zheng, F.H.Yang and Z.G.Chen, “Nonresonant magneto-tunneling in asymmetric GaAs/AlAs double barrier structures”, Phys.Rev.B42,5270 (1990)
5. H.Z.Zheng, A.M.Song, F.H.Yang and Y.X.Li, “Density of states of Two-Dimensional Electron Gas Studied by Magnetocapacitance of Biased Double Barrier Structures”, Phys.Rev.B49,1802(1994)
6. H.Z.Zheng, H.F.Li, Y.M.Zhang, Y.X.Li, X.P.Yang, P.H.Zhang, Wei Zhang, J.F.Tan, “Experimental study of tunneling escape through double barrier resonant tunneling structures”, Phys.Rev.B51,11128(1995)
7. K.J.Luo, H.Z.Zheng, Z.D.Lu,J.Z.Xu, Z.Y.Xu, T.Zhang, C.F.Li, X.P.Yang, J.F.Tian, “Subband separation energy dependence of intersubband relaxation time in wide quantum wells”, Appl.Phys.Lett.70,1155(1997)
8. J.Q.You, H.Z.Zheng and W.L.Wang, “Magnetoexciton Polaritons in Planar Semiconductor Microcavities”, Phys.Rev.B59.1(1999)
9. Yan Tang, Houzhi Zheng, Fuhua Yang, Ping heng Tan, Chengfang Li and Yuexia Li, “Electrical Manifestation of Quantum-Confined Stark Effect by Quantum Capacitance Response in an Optically Excited Quantum Well”,Phys.Rev.B63,113305(2001)
10. Lixiang Cen, Xinqi Li, Yijing Yan, Houzhi Zheng, Shunjin Wang, “Evaluation of holonomic quantum computation:Adiabatic versus nonadiabatic”, Phys.Rev.Lett.90,14,147902(2003)