人才队伍

姓    名:
江潮
性    别:
职    务:
纳米标准研究室副主任
职    称:
研究员
通讯地址:
北京市海淀区中关村北一条11号
邮政编码:
100190
电子邮件:
jiangch(AT)nanoctr.cn

 简历:
 

江潮 男,1965年1月生。现为国家纳米科学中心研究员,中国科学院“百人计划”择优支持入选者,南京理工大学兼职教授,《微纳电子技术》杂志编委。1986年毕业于北京大学物理系,获学士学位。1989年和1998年分别获中国科学院物理研究所和半导体研究所理学硕士和工学博士学位。曾于1998年7月至2005年12月先后在日本北海道大学量子集成电子学研究中心和东京大学生产技术研究所从事博士后研究。曾获日本国文部省外国人(JSPS)特别研究基金资助。
以往的研究经历和主要成果包括:化合物半导体分子束外延(MBE)材料生长和相关器件制备。特别是研究了与GaSb基半导体量子点(Quantum Dot)相关的外延生长,物理光学性质和输运特性。并应用分子束外延的方法实现了非平面条纹图形衬底的选择外延生长原子平滑的高质量脊型量子线及其相关物性的研究。近年已在国际科技期刊上发表SCI收录文章四十余篇。
目前主要研究方向为:1.新型纳米结构及半导体异质结构物理性质与器件研究;2.微纳米半导体结构的光学表征与计量;3.有机薄膜半导体光电器件和大面积柔性电子器件和电路集成研究。

江潮课题组主页


 研究领域:
  新型半导体纳米结构与器件制备和物性研究。

 社会任职:
 

 获奖及荣誉:
  “单元和四元GaAs/AlGaAs量子阱红外探测器阵列” 获中国科学院科技进步一等奖(1993年)。

 代表论著:
 

1.Yuanyuan Hu, Qiong Qi, and Chao Jiang* “Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of Pentacene-based thin-film transistors”, Appl. Phys. Lett., 96(2010)XXX (DOI:10.1063/1.3374887).

2.Qiong Qi, Aifang Yu, Peng Jiang and Chao Jiang* “Enhancement of carrier mobility in pentacene thin-film transistor on SiO2 by controlling the initial film growth modes”, Appl. Surf. Sci. 255(2009)5096-5099.

3.Qiong Qi, Yeping Jiang, Aifang Yu, Xiaohui Qiu and Chao Jiang* “Enhancement of Electrical Conductance for Pentacene Thin Film Transistor by Controlling an Initial Layer-by-layer Growth Mode Directly on SiO2 Insulator”, Jpn. J. Appl. Phys. 48(2009)04C164-1.

4.Aifang Yu, Qiong Qi, Peng Jiang and Chao Jiang* “The effects of hydroxyl-free polystyrene buffer layer on electrical performance of pentacene-based thin-film transistors with high-k oxide gate dielectric”, Synthetic metals 159(2009)1467-1470.

5.YU Ai-Fang(于爱芳), QI Qiong(祁琼), JIANG Peng(江鹏), JIANG Chao(江潮) * “Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric”, Chin. Phys. Lett. 26(2009)078501.

6.Qiong Qi, Aifang Yu, Liangmin Wang and Chao Jiang* “Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-effect Transistor”, J. Nanosci. Nanotechnol. 10(2010)XXX.(DOI: 10.1166/jnn.2010.2802)

7.Miao Zhao, Peng Jiang*, Ke Deng, Si-Shen Xie, Guang-Lu Ge and Chao Jiang* “Modulated self-assembly of 4,4_-diphenyltetrathiafulvalene molecules on highly oriented pyrolytic graphite by n-tetradecane solvent”, Nanotechnology 20 (2009)425301.

8.Miao Zhao, Ke Deng, Peng Jiang,*, Si-Shen Xie, Denis Fichou, and Chao Jiang* “Binary-Component Self-Assembled Monolayer Comprising Tetrathiafulvalene and n-Tetradecane Molecules with Periodic Ordered Phase Separation Structures on a Highly Oriented Pyrolytic Graphite Surface”, J. Phys. Chem. C 114(2010)1646.

9.江潮,于爱芳,祁琼 “高性能有机薄膜晶体管制备及其导电机制”, 《微纳电子技术》,46(2009)384。

10.Chao Jiang, Takuya Kawazu, Shigeki Kobayashi and Hiroyuki Sakaki “Molecular Beam Epitaxial Growth of Very Large Lateral Anisotropic GaSb/GaAs Quantum Dots”, J. Cryst. Growth301-302(2007)828-832.

11. Chao Jiang and Hiroyuki Sakaki “Controlling Anisotropy of GaSb(As)/GaAs Quantum Dots by Self-Assembled Molecular Beam Epitaxy”, Physica E32, 17(2006).

12.Chao Jiang and Hiroyuki Sakaki “Sb/As Intermixing in Self-assembled GaSb/GaAs Type II Quantum Dot Systems and Control of Their Photoluminescence Spectra”, Physica E26, 180-184(2005).

13. S. Kobayashi, C. Jiang, T. Kawazu and H. Sakaki “Self-Assembled Growth of GaSb Type II Quantum Ring Structures”, Jpn. J. Appl. Phys. 43(2004)L662-664.

14. Chao Jiang, Tsutomu Muranaka and Hikeki Hasegawa "Molecular Beam Epitaxy Growth Mechanism and Wire Width Control for Formation of Dense Networks of Narrow InGaAs Quantum Wires", Microelectronic Engineering 63 (2002)293.

15. Chao Jiang and Hideki Hasegawa "Molecular Beam Epitaxy Growth of High-Quality Linear Arrays of InGaAs Ridge Quantum Wires with Nanometer Wire Widths and Submicron Pitches on Patterned InP Substrates" Jpn. J. Appl. Phys. 41(2002)972.

16. Chao Jiang, Tsutomu Muranaka and Hideki Hasegawa “Structural and Optical Properties of InGaAs Ridge Quantum Wires Arrays with Sub-micron Pitches Grown by Selective MBE on Patterned InP Substrates” Jpn. J. Appl. Phys. 41(2002)2683-2688.

17. A. Ito, T. Muranaka, C. Jiang, and H. Hasegawa "Formation of High-Density Hexagonal Networks of InGaAs Ridge Quantum Wires by Atomic Hydrogen-Assisted Selective Molecular Beam Epitaxy", Appl. Surf. Sci. 190(2002)231.
 
18. Chao Jiang, Tsutomu Muranaka and Hideki Hasegawa "Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate", Jpn. J. Appl. Phys. 40(2001)3003-3008.

19. Tsutomu Muranaka, Chao Jiang, Akira Ito and Hikeki Hasegawa "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE Growth of InGaAs Quantum Structure Arrays", Jpn. J. Appl. Phys. 40(2001)1874.

20. Y-G. Xie, S. Kasai, H. Takahashi, C. Jiang and H. Hasegawa "A Novel InGaAs/InAlAs Insulated Gated Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC- and RF-Performance", IEEE Electron Device Lett. 22(2001)312.

21. C. Jiang, H. Fujikura and H. Hasegawa "Vertical Barrier Layer Formation during Selective MBE Growth of InGaAs Ridge Quantum Wires on InP Patterned Substrates", Physica E7(2000)902-906.

22. T. Muranaka, C. Jiang, A. Ito, H. Fujikura and H. Hasegawa "Origin of Non-uniformity in MBE Grown Nanometer-sized InGaAs Ridge Quantum Wires and Its Removal by Atomic Hydrogen-assisted Cleaning", Thin Solid Films 380(2000)189.


 承担科研项目情况:
 

国家重大研究计划(973)项目(2006CB932500)-“重要纳米检测技术的标准化”-项目首席科学家;
中国科学院“百人计划”海外引进杰出人才项目-“新型半导体纳米结构与器件制备和物性研究”-主持;
中国科学院科研装备研制项目(YZ200931)“大面积柔性衬底有机薄膜真空蒸镀制备系统”-主持。
国家自然科学基金面上项目(60746002)“第二类能带对准型GaSb量子点微结构分析及其量子结构多样性形成机理的探索”-主持。